Fabrication of PIN Devices Including ZnO Quantum Dots

被引：1
|
作者：
Zhang, Xinyu [1 ]
Kobayashi, Kenkichiro [1 ]
机构：
[1] Shizuoka Univ, Fac Engn, Dept Mat Sci, Naka Ku, Hamamatsu, Shizuoka 4328561, Japan
来源：
ELECTROCERAMICS IN JAPAN XV | 2013年 / 566卷
关键词：
PIN devices; ZnO-quantum dots; Ga2ZnO4; films; Ni0.7Zn0.3O films;
D O I：
10.4028/www.scientific.net/KEM.566.191
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Films containing ZnO quantum dots (ZnO QDs) with ca.5 run in size were grown at 125 degrees C by chemical vapor deposition. An emission is seen at a wavelength of 367 nm in photoluminescence spectra of the ZnO QDs, and its intensity is enhanced after the deposition of a Ga2ZnO4 film on the ZnO QDs. Using the films of ZnO QDs, we fabricated PIN devices constructed from In1.8Zn0.2O3 / InGaZnO4 / ZnO QDs / Ga2ZnO4 / Ni0.7Zn0.3O / Ni. The PIN devices exhibit good rectification characteristics.
引用
收藏
页码：191 / 194
页数：4
相关论文
共 50 条
  • [1] Fabrication and optical properties of ZnO quantum dots
    Zhang, X. H.
    Chua, S. J.
    Yong, A. M.
    Chow, S. Y.
    Yang, H. Y.
    Lau, S. P.
    Yu, S. F.
    Sun, X. W.
    SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES, 2008, 31 : 71 - +
  • [2] Fabrication of ZnO quantum dots embedded in an amorphous oxide layer
    Kim, KK
    Koguchi, N
    Ok, YW
    Seong, TY
    Park, SJ
    APPLIED PHYSICS LETTERS, 2004, 84 (19) : 3810 - 3812
  • [3] Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices
    Leschkies, Kurtis S.
    Divakar, Ramachandran
    Basu, Joysurya
    Enache-Pommer, Emil
    Boercker, Janice E.
    Carter, C. Barry
    Kortshagen, Uwe R.
    Norris, David J.
    Aydil, Eray S.
    NANO LETTERS, 2007, 7 (06) : 1793 - 1798
  • [4] Fabrication of p-i-n devices consisting of ZnO quantum dots embedded in Ga2ZnO4 film
    Zhang, Xinyu
    Kobayashi, Kenkichiro
    Kohno, Yosiumi
    Tomita, Yasumasa
    Maeda, Yasuhisa
    Matsushima, Shigenori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (06)
  • [5] Fabrication of ZnO/Carbon Quantum Dots Composite Sensor for Detecting NO Gas
    Yu, Ziyang
    Zhang, Liang
    Wang, Xiangyue
    He, Dong
    Suo, Hui
    Zhao, Chun
    SENSORS, 2020, 20 (17) : 1 - 11
  • [6] FABRICATION OF SEMICONDUCTOR QUANTUM DOTS
    FLAGAN, RC
    ATWATER, HA
    VAHALA, KJ
    JOURNAL OF AEROSOL SCIENCE, 1991, 22 : S31 - S33
  • [7] Fabrication of PbS Quantum Dots and their Applications in Solar Cells Based on ZnO Nanorod Arrays
    Kumar, Dinesh
    Chaudhary, Sujeet
    Pandya, Dinesh K.
    2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2017), 2018, 1953
  • [8] Fabrication of fully transparent transistors through solution-processing of ZnO quantum dots
    Dept. of Materials Science and Engineering, Hongik University, Seoul 121-791, Korea, Republic of
    Proc. Int. Meet. Inf. Disp., (472-473):
  • [9] Quantum dots for terahertz devices
    Liu, H. C.
    Aslan, B.
    Gupta, J. A.
    Wasilewski, Z. R.
    Aers, G. C.
    SpringThorpe, A. J.
    Buchanan, A.
    TERAHERTZ PHOTONICS, 2008, 6840
  • [10] Fabrication of multiply-stacked Si quantum dots for floating gate MOS devices
    Makihara, K.
    Ikeda, M.
    Nagai, T.
    Murakami, H.
    Higashi, S.
    Miyazaki, S.
    TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 31, NO 1, 2006, 31 (01): : 133 - 136
12345