Managing subthreshold leakage in charge-based analog circuits with low-VTH transistors by analog T-switch (AT-switch) and super cut-off CMOs (SCCMOS)

被引：50

作者：

Ishida, K ^{[1
]}

Kanda, K ^{[1
]}

Tamtrakarn, A ^{[1
]}

Kawaguchi, H ^{[1
]}

Sakurai, T ^{[1
]}

机构：

[1] Univ Tokyo, Ctr Collaborat Res, Tokyo 1538505, Japan

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2006年 / 41卷 / 04期

关键词：

low V-TH; FD-SOI; signia-delta modulator; subthreshold leakage; switched capacitor;

D O I：

10.1109/JSSC.2006.870761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The analog T-switch (AT-switch) scheme is introduced to suppress subthreshold-leakage problems in charge-based analog circuits such as switched capacitors and sample-and-hold circuits. A 0.5-V sigma-delta modulator is manufactured in a 0.15-mu m FD-SOI process with low V-TH of 0.1 V using the concept. The scheme is compared with another leakage-suppression scheme based oil super cut-off CMOS (SCCMOS) and the conventional circuit which are also fabricated. The sigma-delta modulator based on AT-switch greatly improves 8.1-dB SNDR through reducing nonlinear leakage effects while the modulator based on SCCMOS improves the dynamic range rather than the SNDR by comparing with the conventional sigma-delta modulator.

引用

页码：859 / 867

页数：9