Characterization of Bridgman grown GaSe:Al crystals

被引:26
作者
Guo, J. [1 ]
Xie, J. -J. [1 ]
Zhang, L. -M. [1 ]
Li, D. -J. [1 ]
Yang, G. -L. [1 ]
Andreev, Yu. M. [2 ,3 ]
Kokh, K. A. [4 ]
Lanskii, G. V. [2 ,3 ]
Shabalina, A. V. [3 ]
Shaiduko, A. V. [2 ,3 ]
Svetlichnyi, V. A. [3 ]
机构
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Laser Interact Matter, Changchun 130033, Peoples R China
[2] Inst Monitoring Climat & Ecol Syst SB RAS, Lab Geosphere Biosphere Interact, Tomsk 634055, Russia
[3] Tomsk State Univ, Siberian Phys Tech Inst, Lab Adv Mat & Technol, Tomsk 634050, Russia
[4] SB RAS, Inst Geol & Mineral, Lab Crystal Growth, Novosibirsk 630090 90, Russia
来源
CRYSTENGCOMM | 2013年 / 15卷 / 32期
关键词
GENERATION;
D O I
10.1039/c3ce40116b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Centimeter-sized Al-doped nonlinear GaSe crystals were grown by the modified Bridgman method with heat field rotation. The alumina distribution coefficient in the grown crystals was estimated to be about 8 x 10(-2) for GaSe:Al (>= 0.1 at%) crystals. GaSe: Al (<= 0.5 at%) crystals possess optical properties suitable for non-linear applications. For the first time the increase in the ordinary refractive index of GaSe crystals with doping was demonstrated to be different to other doped GaSe crystals.
引用
收藏
页码:6323 / 6328
页数:6
相关论文
共 28 条
  • [1] Lattice vibrations of pure and doped GaSe
    Allakhverdiev, K
    Baykara, T
    Ellialtioglu, S
    Hashimzade, F
    Huseinova, D
    Kawamura, K
    Kaya, AA
    Kulibekov, AM
    Onari, S
    [J]. MATERIALS RESEARCH BULLETIN, 2006, 41 (04) : 751 - 763
  • [2] Allakhverdiev K. R., 1982, SAE MULLI, V7, P947
  • [3] Growth and microstructure of heterogeneous crystal GaSe:InS
    Atuchin, Victor V.
    Beisel, Nina F.
    Kokh, Konstantin A.
    Kruchinin, Vladimir N.
    Korolkov, Ilya V.
    Pokrovsky, Lev D.
    Tsygankova, Alphiya R.
    Kokh, Aleksander E.
    [J]. CRYSTENGCOMM, 2013, 15 (07): : 1365 - 1369
  • [4] Generation properties of coherent infrared radiation in the optical absorption region of GaSe crystal
    Chen, Ching-Wei
    Hsu, Yu-Kuei
    Huang, Jung Y.
    Chang, Chen-Shiung
    Zhang, Jing-Yuan
    Pan, Ci-Ling
    [J]. OPTICS EXPRESS, 2006, 14 (22) : 10636 - 10644
  • [5] SHG in doped GaSe:In crystals
    Feng, Zhi-Shu
    Kang, Zhi-Hui
    Wu, Feng-Guang
    Gao, Jin-Yue
    Jiang, Yun
    Zhang, Hong-Zhi
    Andreev, Yury M.
    Lanskii, Grigory V.
    Atuchin, Viktor V.
    Gavrilova, Tatyana A.
    [J]. OPTICS EXPRESS, 2008, 16 (13): : 9978 - 9985
  • [6] GROWTH AND CHARACTERIZATION OF III-VI-LAYERED CRYSTALS LIKE GASE, GATE, INSE, GASE1-XTEX AND GAXIN1-XSE
    GOUSKOV, A
    CAMASSEL, J
    GOUSKOV, L
    [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1982, 5 (04): : 323 - 413
  • [7] Greenwood N.N., 1987, Chemistry of the Elements, VSecond
  • [8] Application of a rotating heat field in Bridgman-Stockbarger crystal growth
    Kokh, K. A.
    Nenashev, B. G.
    Kokh, A. E.
    Shvedenkov, G. Yu.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E2129 - E2134
  • [9] Growth of GaSe and GaS single crystals
    Kokh, K. A.
    Andreev, Yu M.
    Svetlichnyi, V. A.
    Lanskii, G. V.
    Kokh, A. E.
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2011, 46 (04) : 327 - 330
  • [10] Kokh K. A., 2011, J CRYST GROWTH, V1, P1164