Energy-rate consideration in wafer bonding

被引：2

作者：

Fan, H

Xu, JG

Sze, KY ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China

[2] Nanyang Technol Univ, Sch Mech & Prod Engn, Singapore 639798, Singapore

来源：

FINITE ELEMENTS IN ANALYSIS AND DESIGN | 2006年 / 42卷 / 8-9期

关键词：

wafer bonding; contact mechanics; energy rate; finite element analysis;

D O I：

10.1016/j.finel.2005.10.003

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

In the present study, we consider the bonding process of a pair of wafers with rough surfaces via an energy-rate concept in which "rate" refers to "area rate". A finite element numerical simulation for a rough surface with periodical distributed asperities bonded onto a rigid half-space is carried out for demonstrating the energy-rate concept. The simulation reveals various phenomena in the wafer bonding, such as self-activated bonding, asperity shape effect and plastic deformation effect in the bonding process. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：709 / 714

页数：6

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