Tailoring the composition of lead zirconate titanate by atomic layer deposition

被引：16

作者：

Choi, Ju H. ^{[1
]}

Zhang, Feng ^{[1
]}

Perng, Ya-Chuan ^{[1
]}

Chang, Jane P. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 01期

基金：

美国国家科学基金会;

关键词：

THIN-FILMS; GROWTH; FERROELECTRICITY; PRECURSORS; CHEMISTRY; SUBSTRATE; BEHAVIOR;

D O I：

10.1116/1.4775789

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The incubation time during atomic layer deposition (ALD) of lead oxide, zirconium oxide, and titanium oxide on each other was quantified in order to precisely control the composition of lead zirconate titanate (PZT). The desired stoichiometry of Pb:Zr:Ti=2:1:1, which yields the desired ferroelectricity, was found to depend strongly on the ALD sequence, the substrate of choice, as well as the postdeposition annealing temperature. With the desired stoichiometry, the ferroelectric and piezoelectric properties of the PZT films were validated by polarization-voltage hysteresis loop and piezoresponse force microscopy, respectively, demonstrating that ALD method is a viable technique for ultra thin ferroelectric films for device applications. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4775789]

引用

页数：7

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