Analysis of low voltage bulk-driven self-biased high swing cascode current mirror

被引：33

作者：

Aggarwal, Bhawna ^{[1
]}

Gupta, Maneesha ^{[2
]}

Gupta, A. K. ^{[3
]}

机构：

[1] Maharaja Agrasen Inst Technol, GGSIPU Sect 22, New Delhi 110086, India

[2] Univ Delhi, Netaji Subhas Inst Technol, Sect 3, New Delhi 110078, India

[3] Natl Inst Technol, Kurukshetra 136119, Haryana, India

来源：

MICROELECTRONICS JOURNAL | 2013年 / 44卷 / 03期

关键词：

Low voltage; Bulk-driven MOSFET; Current mirror; Cascode configuration; Self-bias; High swing operation;

D O I：

10.1016/j.mejo.2012.12.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel low voltage self-biased high swing cascode current mirror (SHCCM) employing bulk-driven NMOS transistors is proposed in this paper. The comparison with the conventional circuit reveals that the proposed bulk-driven circuit operates at lower voltages and provides enhanced bandwidth with improved output resistance. The proposed circuit is further modified by replacing the passive resistance by active MOS realization. Small signal analysis of the proposed and conventional SHCCM are carried out to show the improvement achieved through the proposed circuit. The circuits are simulated in standard SPICE 0.25 mu m CMOS technology and simulated results are compared with the theoretically obtained results. To ensure robustness of the proposed SHCCM, simulation results of component tolerance and process variation have also been included. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：225 / 235

页数：11

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