Arylammonium-Assisted Reduction of the Open-Circuit Voltage Deficit in Wide-Bandgap Perovskite Solar Cells: The Role of Suppressed Ion Migration

被引:160
|
作者
Chen, Cong [1 ,2 ,3 ]
Song, Zhaoning [1 ,2 ]
Xiao, Chuanxiao [1 ,2 ,4 ]
Awni, Rasha A. [1 ,2 ]
Yao, Canglang [1 ,2 ]
Shrestha, Niraj [1 ,2 ]
Li, Chongwen [1 ,2 ]
Bista, Sandip Singh [1 ,2 ]
Zhang, Yi [1 ,2 ]
Chen, Lei [1 ,2 ]
Ellingson, Randy J. [1 ,2 ]
Jiang, Chun-Sheng [4 ]
Al-Jassim, Mowafak [4 ]
Fang, Guojia [3 ]
Yan, Yanfa [1 ,2 ]
机构
[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
[2] Univ Toledo, Wright Ctr Photovolta Innovat & Commercializat, Toledo, OH 43606 USA
[3] Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Sch Phys & Technol, Minist Educ, Wuhan 430072, Peoples R China
[4] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
ACS ENERGY LETTERS | 2020年 / 5卷 / 08期
基金
美国国家科学基金会;
关键词
HALIDE SEGREGATION; PHASE SEGREGATION; CHARGE-TRANSPORT; EFFICIENCY; PERFORMANCE; IMPACT; LAYERS; TRAPS;
D O I
10.1021/acsenergylett.0c01350
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Surface treatment using large alkyl/aryl ammonium cations has demonstrated reduced open-circuit voltage (V-OC) deficits in perovskite solar cells (PSCs), but the origin of the improvements has been vaguely attributed to defect passivation. Here, we combine microscopic probing of the local electrical properties, thermal admittance spectroscopic analysis, and first-principles calculations to elucidate the critical role of arylammonium interface layers in suppressing ion migration in wide-bandgap (WBG) PSCs. Our results reveal that arylammonium surface treatment using phenethylammonium iodide increases the activation energy barrier for ion migration on the surface, which suppresses the accumulation of charge defects at surface and grain boundaries, leading to a reduced dark saturation current density in WBG PSCs. With device optimization, our champion 1.73 eV PSC delivers a power conversion efficiency of 19.07% with a V-OC of 1.25 V, achieving a V-OC deficit of 0.48 V.
引用
收藏
页码:2560 / 2568
页数:9
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