Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

被引：34

作者：

Moselund, K. E. ^{[1
]}

Dobrosz, P. ^{[2
]}

Olsen, S. ^{[2
]}

Pott, V. ^{[1
]}

De Michielis, L. ^{[1
]}

Tsamados, D. ^{[1
]}

Bouvet, D. ^{[1
]}

O'Neill, A. ^{[2
]}

Ionescu, A. M. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lausanne, Switzerland

[2] Univ Newcastle, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne, Tyne & Wear, England

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418899

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.

引用

页码：191 / +

页数：2

共 9 条

[1] Giant piezoresistance effect in silicon nanowires [J].