Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3

被引：18

作者：

Wei, Peng ^{[1
]}

Wang, Zhiyong ^{[1
]}

Liu, Xinfei ^{[1
]}

Aji, Vivek ^{[1
]}

Shi, Jing ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 20期

关键词：

TOPOLOGICAL INSULATOR NANORIBBONS; SINGLE DIRAC CONE; SURFACE-STATES; TRANSPORT; GRAPHENE; LIMIT;

D O I：

10.1103/PhysRevB.85.201402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low temperatures. We perform low-energy electron beam irradiation (< 16 keV) and electrostatic gating to control the carrier density and therefore the Fermi level position in the nanodevices. In slightly p-doped Bi2-xCaxSe3 devices, continuous tuning of the Fermi level from the bulk valence band to the band gap reveals an enhancement (> a factor of 10) in the field-effect mobility, which suggests suppressed backscattering expected for the Dirac fermion surface states in the gap of topological insulators.

引用

页数：5

共 25 条

[1]

Analytis JG, 2010, NAT PHYS, V6, P960, DOI [10.1038/nphys1861, 10.1038/NPHYS1861]

[2] Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3: A comparison of photoemission and Shubnikov-de Haas measurements [J].

Analytis, James G. ;

Chu, Jiun-Haw ;

Chen, Yulin ;

Corredor, Felipe ;

McDonald, Ross D. ;

Shen, Z. X. ;

Fisher, Ian R. .

PHYSICAL REVIEW B, 2010, 81 (20)

[3]

Büttner B, 2011, NAT PHYS, V7, P418, DOI [10.1038/nphys1914, 10.1038/NPHYS1914]

[4] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[5] Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi2Se3 [J].

Checkelsky, J. G. ;

Hor, Y. S. ;

Cava, R. J. ;

Ong, N. P. .

PHYSICAL REVIEW LETTERS, 2011, 106 (19)

[6] Quantum Interference in Macroscopic Crystals of Nonmetallic Bi2Se3 [J].

Checkelsky, J. G. ;

Hor, Y. S. ;

Liu, M. -H. ;

Qu, D. -X. ;

Cava, R. J. ;

Ong, N. P. .

PHYSICAL REVIEW LETTERS, 2009, 103 (24)

[7] Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].

Chen, J. ;

Qin, H. J. ;

Yang, F. ;

Liu, J. ;

Guan, T. ;

Qu, F. M. ;

Zhang, G. H. ;

Shi, J. R. ;

Xie, X. C. ;

Yang, C. L. ;

Wu, K. H. ;

Li, Y. Q. ;

Lu, L. .

PHYSICAL REVIEW LETTERS, 2010, 105 (17)

[8] Massive Dirac Fermion on the Surface of a Magnetically Doped Topological Insulator [J].

Chen, Y. L. ;

Chu, J. -H. ;

Analytis, J. G. ;

Liu, Z. K. ;

Igarashi, K. ;

Kuo, H. -H. ;

Qi, X. L. ;

Mo, S. K. ;

Moore, R. G. ;

Lu, D. H. ;

Hashimoto, M. ;

Sasagawa, T. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. X. .

SCIENCE, 2010, 329 (5992) :659-662

[9] Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors [J].

Cho, Sungjae ;

Butch, Nicholas P. ;

Paglione, Johnpierre ;

Fuhrer, Michael S. .

NANO LETTERS, 2011, 11 (05) :1925-1927

[10] A tunable topological insulator in the spin helical Dirac transport regime [J].

Hsieh, D. ;

Xia, Y. ;

Qian, D. ;

Wray, L. ;

Dil, J. H. ;

Meier, F. ;

Osterwalder, J. ;

Patthey, L. ;

Checkelsky, J. G. ;

Ong, N. P. ;

Fedorov, A. V. ;

Lin, H. ;

Bansil, A. ;

Grauer, D. ;

Hor, Y. S. ;

Cava, R. J. ;

Hasan, M. Z. .

NATURE, 2009, 460 (7259) :1101-1105

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