Low noise and high gain RF MOSFETs on plastic substrates

被引：2

作者：

Kao, HL ^{[1
]}

Chin, A ^{[1
]}

Huang, CC ^{[1
]}

Hung, BF ^{[1
]}

Chiang, KC ^{[1
]}

Lai, ZM ^{[1
]}

McAlister, SP ^{[1
]}

Chi, CC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Univ Syst Taiwan, Dept Elect Engn, Nano Sci Tech Ctr, Hsinchu, Taiwan

来源：

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年

关键词：

RF noise; associated gain; MOSFET; plastic;

D O I：

10.1109/MWSYM.2005.1516584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low minimum noise figure (NFmin) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 mu m RF MOSFETs on plastic, made by substrate thinning (similar to 30 mu m), transfer and bonding. The performance can be further improved to 0.96 dB NFmin and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.

引用

页码：295 / 298

页数：4