Fabrication and characterization of carbon nanotubes integrated on field-emission diode

被引：3

作者：

Tsai, J. T. H. ^{[1
]}

Li, J. G. S. ^{[1
]}

机构：

[1] Tatung Univ, Grad Inst Electroopt Engn, Taipei 10452, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 07期

关键词：

carbon nanotubes (CNTs); diodes; electron emission; field emission; vacuum microelectronics;

D O I：

10.1109/LED.2008.2000618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon nanotubes (CNTs) deposited by electrophoresis on a free-standing thin metal film edge are demonstrated. These CNTs act as electron field emitter which Was integrated on the cathode of the field-emission vacuum diode. This diode exhibits a low reverse leakage current (< 10(-11) A) with high on-off ratio of 10(6). Owing to the low turn-on voltage of the nanosized CNTs, the field-emission diode exhibited less power consumption compared with the conventional vacuum-tube diode. Electronic tests of this vacuum diode perform its fast switching speed ability and high voltage rectification. This approach presents a route to use nanomaterials with a microelectromechanical system process to develop high-speed vacuum microelectronics.

引用

页码：691 / 693

页数：3