Effects of thermal annealing and Si incorporation on bonding structure and fracture properties of diamond-like carbon films

被引：18

作者：

Choi, Heon Woong ^{[1
,2
]}

Gage, David A. ^{[2
]}

Dauskardt, Reinhold H. ^{[2
]}

Lee, Kwang-Rycol ^{[3
]}

Oh, Kyu Hwan ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[3] Korea Adv Inst Sci & Technol, Future Convergence Technol Lab, Seoul 130650, South Korea

来源：

关键词：

Diamond-like carbon (DLC); Four-point bending test; Fracture energy; Mechanical property; MECHANICAL-PROPERTIES; THIN-FILMS; ADHESION; SILICON; BEHAVIOR; DLC; COATINGS; CRACKING;

D O I：

10.1016/j.diamond.2008.10.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of thermal annealing and Si incorporation on the structure and properties of diamond-like carbon (DLC) films were investigated. As-deposited DLC film (DLC) and Si incorporated DLC film (Si-DLC), both with and without thermal annealing, were analyzed for bonding structure, residual stress, film thickness, elastic modulus and fracture properties using Raman spectroscopy, wafer curvature, nanoindentation, four-point bend fracture testing, and X-ray photoelectron spectroscopy (XPS). Raman spectroscopy clearly showed that thermal annealing of DLC films promotes more sp(2) bonding character, whereas Si incorporation into the films promotes more sp(3) bonding character. Interfacial fracture energies, film hardness and elastic modulus, and residual film stress were all found to vary strongly with the degree of sp(3) bonding in the DLC film. These changes in mechanical properties are rationalized in terms of the degree of three dimensional inter-links within the atomic bond network. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：615 / 619

页数：5

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