High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

被引：41

作者：

Kopytko, M. ^{[1
]}

Keblowski, A. ^{[2
]}

Gawron, W. ^{[1
]}

Madejczyk, P. ^{[1
]}

Kowalewski, A. ^{[1
]}

Jozwikowski, K. ^{[1
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland

[2] Vigo Syst SA, PL-05850 Ozarow Mazowiecki, Poland

来源：

OPTO-ELECTRONICS REVIEW | 2013年 / 21卷 / 04期

关键词：

MOCVD growth; HgCdTe photodetectors; barrier photodetectors; uncooled photodetectors; Auger suppression;

D O I：

10.2478/s11772-013-0101-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper reports on the first experimental results of the mid-wave infrared (MWIR) HgCdTe barrier detectors operated at near-room temperatures and fabricated using metal organic chemical vapor deposition (MOCVD). SIMS profiles let to compare projected and obtained structures and reveals interdiffusion processes between the layers. Undesirable iodine diffusion from cap to the barrier increase the valance band offset and is the key item in limiting the performance of HgCdTe nBn detector. However, MOCVD technology with a wide range of composition and donor/acceptor doping and without post grown annealing might be successfully adopted for barrier device architectures.

引用

页码：402 / 405

页数：4

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