The role of p-type doping and the density of states on the modulation response of quantum dot lasers

被引：104

作者：

Shchekin, OB ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 15期

关键词：

D O I：

10.1063/1.1469212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The modulation response of quantum dot (QD) lasers is analyzed using a quasi-equilibrium approach. The model suggests that present QD lasers are limited due to hole levels that are closely spaced in energy, as well as inhomogeneous broadening. Significant improvements are predicted through p-type modulation doping. The results are consistent with present QD lasers being limited in their modulation response by their differential gain as opposed to carrier capture. (C) 2002 American Institute of Physics.

引用

页码：2758 / 2760

页数：3

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