Evaluation of barrier height and thickness in tunneling junctions by numerical calculation on tunnel probability

被引：14

作者：

Arakawa, N ^{[1
]}

Otaka, Y ^{[1
]}

Shiiki, K ^{[1
]}

机构：

[1] Keio Univ, Dept Appl Phys & Physicoinformat, Yokohama, Kanagawa 2238522, Japan

来源：

THIN SOLID FILMS | 2006年 / 505卷 / 1-2期

关键词：

tunneling junctions; numerical calculation; two-layer model; barrier height;

D O I：

10.1016/j.tsf.2005.10.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The barrier height and thickness of Al/AlOx/Al and Co/AlOx/Co tunneling junctions were evaluated from current-voltage (I-V) data by fitting the numerical calculation of tunnel probability. As a calculation model, one-layer and two-layer models of MON were assumed. The results of the one-layer model showed a physically unexpected relation between barrier height and thickness. The two-layer model showed no such relation. The results of the two-layer model showed that insulators of Al/AlOx/Al junctions were oxidized more incompletely as oxidation time was increased and insulators of Co/AlOx/Co junctions were oxidized more completely at higher oxidation temperatures. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：67 / 70

页数：4