Si and Mg Ion Implantation for Doping of GaN Grown on Silicon

被引：0

作者：

Coig, M. ^{[1
]}

Lardeau-Falcy, A. ^{[1
]}

Sacher, N. ^{[2
]}

Kanyandekwe, J. ^{[1
]}

Huvelin, A. ^{[1
]}

Biscarrat, J. ^{[1
]}

Vilain, E. ^{[1
]}

Milesi, F. ^{[1
]}

Mazen, F. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, LETI, Grenoble, France

[2] Centrotherm Int AG, Proc Dev, Blaubeuren, Germany

来源：

2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018) | 2018年

关键词：

GaN; doping; ion implantation; silicon; magnesium; ELECTRICAL ACTIVATION;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

N- and p-type doping of GaN grown on silicon using ion implantation of silicon and magnesium respectively, were investigated. For n-type doping, we studied the effects of high temperature annealing and implanted dose on Si activation. We obtained low sheet resistance of implanted layer, compatible with power device and Radio Frequency applications. P-type doping is more challenging. However, by using the combination of soak annealing with RTA at very high temperature and the N co-implantation, we evidenced two promising ways of optimizing p-doping that could lead to the electrical activation of Mg implanted GaN on Si layers.

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页码：70 / 73

页数：4

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