AlGaInN violet laser diodes grown on GaN substrates with low aspect ratio

被引：16

作者：

Ito, S ^{[1
]}

Yamasaki, Y ^{[1
]}

Omi, S ^{[1
]}

Takatani, K ^{[1
]}

Kawakami, T ^{[1
]}

Ohno, T ^{[1
]}

Ishida, M ^{[1
]}

Ueta, Y ^{[1
]}

Yuasa, T ^{[1
]}

Taneya, M ^{[1
]}

机构：

[1] Sharp Co Ltd, Devices Technol Res Labs, Tenri, Nara 6328567, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 01期

关键词：

GaN; AlGaInN; laser diode; radiation angle; aspect ratio;

D O I：

10.1143/JJAP.43.96

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaInN violet laser diodes grown on GaN substrates have been studied. Waveguide simulations have been performed and perpendicular radiation angles have been investigated. A peculiar layer structure has been proposed to reduce the perpendicular radiation angle and compared with a conventional laser. The laser structure has an n-cladding layer consisting of three AlGaN films, the middle film of which has relatively high Al composition. A laser diode with an optimized structure has been fabricated. The threshold current density and slope efficiency have been 2.9 kA/cm(2) and 1.4 W/A, respectively. The perpendicular radiation angle has been as small as 16.2degrees. The AlGaInN violet laser diode with a low aspect ratio of 1.6 and a small threshold current of 29 mA has been realized.

引用

页码：96 / 99

页数：4

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