Crystallization kinetics of Ga metallic nano-droplets under As flux

被引：22
作者：
Bietti, S. [1 ]
Somaschini, C.
Sanguinetti, S.
机构：
[1] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy
来源：
NANOTECHNOLOGY | 2013年 / 24卷 / 20期
关键词：
QUANTUM DOTS; GROWTH; MECHANISM; EPITAXY;
D O I：
10.1088/0957-4484/24/20/205603
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present an experimental investigation of the crystallization dynamics of Ga nano-droplets under As flux. The transformation of the metallic Ga contained in the droplets into a GaAs nano-island proceeds by increasing the size of a tiny ring of GaAs which is formed just after the Ga deposition at the rim of a droplet. The GaAs crystallization rate depends linearly on the liquid-solid interface area. The maximum growth rate is set by the As flux impinging on the droplet, thus showing an efficient As incorporation and transport despite the predicted low solubility of the As in metallic Ga at the crystallization temperatures.
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页数：5
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