Power Electronic Devices in the Future

被引：80
作者：
Hudgins, Jerry L. [1 ]
机构：
[1] Univ Nebraska, Elect Engn Dept, Lincoln, NE 68588 USA
来源：
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS | 2013年 / 1卷 / 01期
关键词：
Carbon nanotubes; diamond; gallium nitride (GaN); power semiconductor devices; silicon carbide (SiC); wide band gap semiconductors;
D O I：
10.1109/JESTPE.2013.2260594
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses extrapolations of current silicon power device technology into the future, followed by discussions of wide band gap (WBG) power devices with a focus on silicon carbide and gallium nitride. Other WBG materials are included from carbon, such as diamond and nanotubes, to various nitrides. Far future material development, that may impact power electronic devices decades out, is also discussed.
引用
收藏
页码：11 / 17
页数：7
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