Analytical surface-potential compact model for amorphous-IGZO thin-film transistors

被引：32
作者：
Zong, Zhiwei [1 ]
Li, Ling [1 ]
Jang, Jin [2 ,3 ]
Lu, Nianduan [1 ]
Liu, Ming [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China
[2] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
[3] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 21期
关键词：
LONG-CHANNEL;
D O I：
10.1063/1.4922181
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a compact model based on surface potential for amorphous-InGaZnO thin-film transistors, built using multiple trapping and detrapping theory. Using this model, the surface potential can be calculated analytically, so it can be used to rapidly determine the transistor characteristics during circuit simulation. We verified the proposed model using both numerical simulation and experiment, showing that the model is accurate over a wide range of operation regions. The model also provides a physics-based consistent description of DC and AC device characteristics and enables accurate design of amorphous InGaZnO thin-film transistor circuits. (C) 2015 AIP Publishing LLC.
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页数：5
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