Fabrication and centeracterization of ordered Culn(1-x)GaxSe2 nanopore films via template-based electrodeposition

被引：14

作者：

Li, Ming ^{[1
,2
]}

Zheng, Maojun ^{[1
,2
]}

Zhou, Tao ^{[1
,2
]}

Li, Changli ^{[1
,2
]}

Ma, Li ^{[3
]}

Shen, Wenzhong ^{[1
,2
]}

机构：

[1] Shanghai Jiao Tong Univ, Lab Condensed Matter Spect & Optoelect Phys, Minist Educ, Dept Phys, Shanghai 200240, Peoples R China

[2] Shanghai Jiao Tong Univ, Key Lab Artificial Struct & Quantum Control, Minist Educ, Dept Phys, Shanghai 200240, Peoples R China

[3] Shanghai Jiao Tong Univ, Sch Chem & Chem Technol, Shanghai 200240, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

关键词：

CuIn(1-x)GaxSe2; nanopore films; electrodeposition; anodic aluminumoxide; annealing; CUINSE2; THIN-FILMS; SOLAR-CELL; NANOWIRE ARRAYS; GROWTH;

D O I：

10.1186/1556-276X-7-675

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ordered CuIn(1-x)Ga (x) Se-2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting.

引用

页码：1 / 6

页数：6

共 31 条

[21] 19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor [J].