Fabrication and centeracterization of ordered Culn(1-x)GaxSe2 nanopore films via template-based electrodeposition

被引:14
作者
Li, Ming [1 ,2 ]
Zheng, Maojun [1 ,2 ]
Zhou, Tao [1 ,2 ]
Li, Changli [1 ,2 ]
Ma, Li [3 ]
Shen, Wenzhong [1 ,2 ]
机构
[1] Shanghai Jiao Tong Univ, Lab Condensed Matter Spect & Optoelect Phys, Minist Educ, Dept Phys, Shanghai 200240, Peoples R China
[2] Shanghai Jiao Tong Univ, Key Lab Artificial Struct & Quantum Control, Minist Educ, Dept Phys, Shanghai 200240, Peoples R China
[3] Shanghai Jiao Tong Univ, Sch Chem & Chem Technol, Shanghai 200240, Peoples R China
来源
NANOSCALE RESEARCH LETTERS | 2012年 / 7卷
关键词
CuIn(1-x)GaxSe2; nanopore films; electrodeposition; anodic aluminumoxide; annealing; CUINSE2; THIN-FILMS; SOLAR-CELL; NANOWIRE ARRAYS; GROWTH;
D O I
10.1186/1556-276X-7-675
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ordered CuIn(1-x)Ga (x) Se-2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting.
引用
收藏
页码:1 / 6
页数:6
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