Electrically and optically active molybdenum impurities in commercial SiC substrates

被引：4

作者：

Baur, J ^{[1
]}

Kunzer, M ^{[1
]}

Dombrowski, KF ^{[1
]}

Kaufmann, U ^{[1
]}

Schneider, J ^{[1
]}

Baranov, PG ^{[1
]}

Mokhov, EN ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期

关键词：

electron spin resonance; molybdenum impurities; SiC substrates;

D O I：

10.1016/S0921-5107(96)01994-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the identification of optically and electrically active molybdenum impurities in commercial 6H- and 15R-SiC substrates by conventionally and optically detected magnetic resonance (ESR, ODMR) and magnetic circular dichroism (MCD) detection. Two impurity charge states, Mo4+(4d(2)) and Mo3+(4d(3)), reported for both polytypes. We also observed the (3)A(2) --> T-3(2) crystal field absorptions of Mo4+(4d(2)) in the 1.0-1.25 eV spectral range. Mo impurities on different inequivalent lattice sites in 6H- and 15R-SiC are resolved for the first time. (C) 1997 Elsevier Science S.A.

引用

页码：313 / 316

页数：4

共 6 条

[1]

Abragam A., ELECT PARAMAGNETIC R

[2] Identification of molybdenum in 6H-SiC by magnetic resonance techniques [J].

Dombrowski, KF ;

Kunzer, M ;

Kaufmann, U ;

Schneider, J ;

Baranov, PG ;

Mokhov, EN .

PHYSICAL REVIEW B, 1996, 54 (10) :7323-7327

[3] IDENTIFICATION OF THE BIGA HETEROANTISITE DEFECT IN GAAS-BI [J].

KUNZER, M ;

JOST, W ;

KAUFMANN, U ;

HOBGOOD, HM ;

THOMAS, RN .

PHYSICAL REVIEW B, 1993, 48 (07) :4437-4441

[4]

KUNZER M, 1996, P ISCM 95 JUST PHYS, V142, P385

[5]

SCHEIDER J, 1990, APPL PHYS LETT, V56, P1184

[6] EPITAXIAL-GROWTH OF SILICON-CARBIDE LAYERS BY SUBLIMATION SANDWICH METHOD .1. GROWTH-KINETICS IN VACUUM [J].

VODAKOV, YA ;

MOKHOV, EN ;

RAMM, MG ;

ROENKOV, AD .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (06) :729-740

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