In-Materio Extreme Learning Machines

被引:0
|
作者
Jones, Benedict A. H. [1 ]
Al Moubayed, Noura [2 ]
Zeze, Dagou A. [1 ]
Groves, Chris [1 ]
机构
[1] Univ Durham, Dept Engn, Durham DH1 3LE, England
[2] Univ Durham, Dept Comp Sci, Durham DH1 3LE, England
来源
PARALLEL PROBLEM SOLVING FROM NATURE - PPSN XVII, PPSN 2022, PT I | 2022年 / 13398卷
基金
英国工程与自然科学研究理事会;
关键词
Evolution in-Materio; Evolvable processors; Extreme learning machines; Material neurons; Virtual neurons; Classification; DIFFERENTIAL EVOLUTION; NETWORK;
D O I
10.1007/978-3-031-14714-2_35
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
Nanomaterial networks have been presented as a building block for unconventional in-Materio processors. Evolution in-Materio (EiM) has previously presented a way to configure and exploit physical materials for computation, but their ability to scale as datasets get larger and more complex remains unclear. Extreme Learning Machines (ELMs) seek to exploit a randomly initialised single layer feed forward neural network by training the output layer only. An analogy for a physical ELM is produced by exploiting nanomaterial networks as material neurons within the hidden layer. Circuit simulations are used to efficiently investigate diode-resistor networks which act as our material neurons. These in-Materio ELMs (iM-ELMs) outperform common classification methods and traditional artificial ELMs of a similar hidden layer size. For iM-ELMs using the same number of hidden layer neurons, leveraging larger more complex material neuron topologies (with more nodes/electrodes) leads to better performance, showing that these larger materials have a better capability to process data. Finally, iM-ELMs using virtual material neurons, where a single material is re-used as several virtual neurons, were found to achieve comparable results to iM-ELMs which exploited several different materials. However, while these Virtual iM-ELMs provide significant flexibility, they sacrifice the highly parallelised nature of physically implemented iM-ELMs.
引用
收藏
页码:505 / 519
页数:15
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