Simulation demonstration and experimental fabrication of a multiple-slot waveguide

被引:16
作者
Tu, Xiaoguang [1 ]
Xu, Xuejun [1 ]
Chen, Shaowu [1 ]
Yu, Jinzhong [1 ]
Wang, Qiming [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
dielectric waveguides; silicon-on-insulator technology;
D O I
10.1109/LPT.2007.915619
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A multiple-slot waveguide is presented and demonstrated through theoretical simulation. Taking a double-slot waveguide as an example, the results show a nearly 30% enhancement of optical intensity compared with the traditional single-slot waveguide with the same slot gap width. Therefore, the E-field intensity of the slot can be increased by adding another smaller slot. A double-slot waveguide with oxide and air as low index slot materials is realized experimentally and the formation processes of the slots are analyzed.
引用
收藏
页码:333 / 335
页数:3
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