A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film

被引：25

作者：

Bi, Zhen ^{[1
,2
]}

Yang, Xiaodong ^{[1
]}

Zhang, Jingwen ^{[1
]}

Bian, Xuming ^{[1
]}

Wang, Dong ^{[1
]}

Zhang, Xinan ^{[1
]}

Hou, Xun ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Key Lab Photon Technol Informat, Xian 710049, Peoples R China

[2] Xidian Univ, Sch Sci, Xian 710071, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 04期

关键词：

ZnO; photodetector; back-illuminated; array; DETECTORS;

D O I：

10.1007/s11664-008-0601-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A back-illuminated vertical-structure ZnO ultraviolet (UV) detector was fabricated using an indium-tin oxide (ITO) electrode. Ordered ITO and ZnO films were grown on a quartz substrate by radiofrequency sputtering. At 5 V bias, the dark current was 640 mu A and the photocurrent was 16.8 mA under UV illumination (365 nm, 10 mu W), indicating a high responsivity of 1616 A/W. The response time measurements showed a rise time of 71.2 ns and a decay time of 377 mu s. The ZnO detector performed well and can be used in a focal-plane array for UV image detection.

引用

页码：609 / 612

页数：4

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