Barrierless Cu-Ni-Nb thin films on silicon with high thermal stability and low electrical resistivity

被引：10

作者：

Li, Xiao Na ^{[1
]}

Zhao, Li Rong ^{[1
]}

Li, Zhen ^{[2
]}

Liu, Li Jun ^{[1
]}

Bao, Cui Min ^{[3
]}

Chu, Jinn P. ^{[4
]}

Dong, Chuang ^{[1
]}

机构：

[1] Dalian Univ Technol, Minist Educ, Sch Mech Engn, Key Lab Mat Modificat Laser, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Sch Mech Engn, Dalian 116024, Peoples R China

[3] Shenyang Blower Works Grp Ltd, Shenyang 110142, Peoples R China

[4] Natl Taiwan Univ Sci & Technol, Dept Mat Sci & Engn, Taipei 10607, Taiwan

来源：

JOURNAL OF MATERIALS RESEARCH | 2013年 / 28卷 / 24期

基金：

美国国家科学基金会;

关键词：

DIFFUSION BARRIER; COPPER METALLIZATION; BEHAVIOR; LAYER; INTERCONNECTS; RESISTANCE; SIO2; MO;

D O I：

10.1557/jmr.2013.355

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we demonstrate a thin film Cu-Ni-Nb alloy deposited directly on silicon, without a designated barrier, showing very high thermal stability at a temperature up to 700 degrees C for 1 h. Thin [Nb-Ni-12]Cu-x films were sputter deposited and annealed, and their material and electrical properties were studied. The results can be explained by the "cluster-plus-glue atom" model for stable solid solutions, where [Nb-Ni-12] cuboctahedral clusters are embedded in a Cu matrix. In this model, the clusters are congruent with the Cu minimizing atomic interactions allowing a good stability. The properties of the films were found to be affected by the Ni/Nb ratios. Especially, the ( Nb1.2/13.2Ni12/13.2)(0.3)Cu-99.7 film annealed at 500 degrees C for 1 h had the lowest electrical resistivity of about 2.7 mu Omega cm. And even after 40 h annealing at 500 degrees C, it maintained a low resistivity of about 2.8 mu Omega cm, demonstrating extremely high stabilities against silicide formation.

引用

页码：3367 / 3373

页数：7

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