Epitaxial Growth and Electronic Properties of Large Hexagonal Graphene Domains on Cu(111) Thin Film

被引：98

作者：

Ago, Hiroki ^{[1
,2
]}

Kawahara, Kenji ^{[1
]}

Ogawa, Yui ^{[2
]}

Tanoue, Shota ^{[2
]}

Bissett, Mark A. ^{[1
]}

Tsuji, Masaharu ^{[1
,2
]}

Sakaguchi, Hidetsugu ^{[2
]}

Koch, Roland J. ^{[3
]}

Fromm, Felix ^{[3
]}

Seyller, Thomas ^{[3
]}

Komatsu, Katsuyoshi ^{[4
]}

Tsukagoshi, Kazuhito ^{[4
]}

机构：

[1] Kyushu Univ, Inst Mat Chem & Engn, Fukuoka 8168580, Japan

[2] Kyushu Univ, Grad Sch Engn Sci, Fukuoka 8168580, Japan

[3] Tech Univ Chemnitz, Inst Phys, D-09126 Chemnitz, Germany

[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 07期

关键词：

CHEMICAL-VAPOR-DEPOSITION; SINGLE-LAYER GRAPHENE; LARGE-AREA; GRAIN-BOUNDARIES; CRYSTAL GRAPHENE; COPPER FOILS; HIGH-QUALITY; TRANSPORT; MOBILITY;

D O I：

10.7567/APEX.6.075101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large hexagonal single-crystalline domains of single-layer graphene are epitaxially grown by ambient-pressure chemical vapor deposition over a thin Cu(111) film deposited on c-plane sapphire. The hexagonal graphene domains with a maximum size of 100 mu m are oriented in the same direction due to the epitaxial growth. Reflecting high crystallinity, a clear band structure with the Dirac cone is observed by angle-resolved photoelectron spectroscopy (ARPES), and a high carrier mobility exceeding 4,000 cm(2) V-1 s(-1) is obtained on SiO2/Si at room temperature. Our epitaxial approach combined with large domain growth is expected to contribute to future electronic applications. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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