Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer

被引：14

作者：

Ohata, Toshiya ^{[1
]}

Honda, Yoshio ^{[1
]}

Yamaguchi, Masahito ^{[1
]}

Amano, Hiroshi ^{[1
]}

机构：

[1] Nagoya Univ, Akasaki Res Ctr, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 08期

关键词：

GAN; SAPPHIRE;

D O I：

10.7567/JJAP.52.08JB11

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thick InGaN film was grown on a sapphire substrate by metal organic vapor phase epitaxy using a thin buffer layer of sputter-deposited InGaN. A thick film of highly luminescent In0.2Ga0.8N can be successfully grown at a rate as high as 2 mu m/h. The crystal quality of InGaN grown on the sputter-deposited InGaN buffer layer was better than that of InGaN grown directly on the sapphire substrate. The sample showed n-type conduction with a carrier concentration and mobility of 5 x 10(18) cm(-3) and 3 cm(2)/(V.s), respectively. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

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