The effect of interface state continuum on the impedance spectroscopy of semiconductor heterojunctions

被引:22
作者
Brus, V. V. [1 ,2 ]
机构
[1] NAS Ukraine, Chernivtsi Branch, Frantsevich Inst Problems Mat Sci, UA-58001 Chernovtsy, Ukraine
[2] Chernivtsi Natl Univ, Dept Elect & Energy Engn, UA-58012 Chernovtsy, Ukraine
关键词
D O I
10.1088/0268-1242/28/2/025013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A quantitative analysis of the impedance spectroscopy of semiconductor heterojunctions was carried out in the presence of interface state continuum at the heterojunction interface. A comparison of the impedance spectroscopy of semiconductor heterojunctions simulated in the context of the interface state continuum model with that simulated in the scope of the single-level state model was carried and possible misinterpretations were considered. The previously proposed approaches for the determination of the interface-state-related parameters and for the calculation of the actual barrier capacitance (the single-level state model) were modified in order to take into account the effect of interface state continuum.
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页数:6
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