Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study

被引：50
作者：
Bertazzi, Francesco [1 ,2 ]
Zhou, Xiangyu [1 ]
Goano, Michele [1 ,2 ]
Ghione, Giovanni [1 ]
Bellotti, Enrico [3 ]
机构：
[1] Politecn Torino, Dipartimento Elettron & Telecomunicaz, I-10129 Turin, Italy
[2] Politecn Torino, IEIIT CNR, I-10129 Turin, Italy
[3] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期
关键词：
LIGHT-EMITTING-DIODES; DOT P METHOD; NONLOCAL PSEUDOPOTENTIAL CALCULATION; ELECTRONIC-STRUCTURE CALCULATIONS; MONTE-CARLO-SIMULATION; PHASE MATERIALS SYSTEM; BAND-STRUCTURE; WURTZITE SEMICONDUCTORS; DIELECTRIC FUNCTION; IMPACT-IONIZATION;
D O I：
10.1063/1.4819129
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A microscopic model, based on a full-Brillouin-zone description of the electronic structure, is used to investigate Auger transitions in InGaN/GaN quantum wells. The lack of momentum conservation along the confining direction enhances direct (i.e., phononless) Auger transitions, leading to Auger coefficients in the range of those predicted for phonon-dressed processes in bulk InGaN. The dependence of Auger coefficients on temperature and quantum well thickness is analyzed. The limitations of conventional multiband models, based on zone-center approximations of the band structure, are discussed. (C) 2013 AIP Publishing LLC.
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页数：5
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