Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study

被引：50
作者：
Bertazzi, Francesco [1 ,2 ]
Zhou, Xiangyu [1 ]
Goano, Michele [1 ,2 ]
Ghione, Giovanni [1 ]
Bellotti, Enrico [3 ]
机构：
[1] Politecn Torino, Dipartimento Elettron & Telecomunicaz, I-10129 Turin, Italy
[2] Politecn Torino, IEIIT CNR, I-10129 Turin, Italy
[3] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期
关键词：
LIGHT-EMITTING-DIODES; DOT P METHOD; NONLOCAL PSEUDOPOTENTIAL CALCULATION; ELECTRONIC-STRUCTURE CALCULATIONS; MONTE-CARLO-SIMULATION; PHASE MATERIALS SYSTEM; BAND-STRUCTURE; WURTZITE SEMICONDUCTORS; DIELECTRIC FUNCTION; IMPACT-IONIZATION;
D O I：
10.1063/1.4819129
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A microscopic model, based on a full-Brillouin-zone description of the electronic structure, is used to investigate Auger transitions in InGaN/GaN quantum wells. The lack of momentum conservation along the confining direction enhances direct (i.e., phononless) Auger transitions, leading to Auger coefficients in the range of those predicted for phonon-dressed processes in bulk InGaN. The dependence of Auger coefficients on temperature and quantum well thickness is analyzed. The limitations of conventional multiband models, based on zone-center approximations of the band structure, are discussed. (C) 2013 AIP Publishing LLC.
引用
收藏
页数：5
相关论文
共 71 条
[1]   Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure [J].
Andreev, AD ;
O'Reilly, EP .
APPLIED PHYSICS LETTERS, 2004, 84 (11) :1826-1828
[2]   Auger recombination in strained quantum wells [J].
Andreev, AD ;
Zegrya, GG .
SEMICONDUCTORS, 1997, 31 (03) :297-303
[3]   Theory of the electronic structure of GaN/AIN hexagonal quantum dots [J].
Andreev, AD ;
O'Reilly, EP .
PHYSICAL REVIEW B, 2000, 62 (23) :15851-15870
[4]  
Baldanzi A, 2001, PHYS STATUS SOLIDI B, V228, P425, DOI 10.1002/1521-3951(200111)228:2<425::AID-PSSB425>3.0.CO
[5]  
2-Q
[6]   Alloy scattering in AlGaN and InGaN: A numerical study [J].
Bellotti, Enrico ;
Bertazzi, Francesco ;
Goano, Michele .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
[7]  
Bernardini F., 2007, NITRIDE SEMICONDUCTO, P49
[8]  
Bertazzi F., 2013, PHYS REV LETT, V110
[9]   Numerical analysis of indirect Auger transitions in InGaN [J].
Bertazzi, Francesco ;
Goano, Michele ;
Bellotti, Enrico .
APPLIED PHYSICS LETTERS, 2012, 101 (01)
[10]   A numerical study of Auger recombination in bulk InGaN [J].
Bertazzi, Francesco ;
Goano, Michele ;
Bellotti, Enrico .
APPLIED PHYSICS LETTERS, 2010, 97 (23)
12345678