Design of Low-Power and High-Gain CMOS LNA with Current-Reused Topology

被引:4
|
作者
Wang, Sen [1 ]
Lin, Wen-Jie
机构
[1] Natl Taipei Univ Technol, Dept Elect Engn, Taipei 106, Taiwan
关键词
Low power; X-band; CMOS; LNA; CR;
D O I
10.1002/mop.27889
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents the design of low-power and high-gain X-band CMOS low-noise amplifier (LNA) using a current-reused (CR) topology. The proposed LNA is equivalent to a three common-source stage cascade amplifier. With the CR technique, the amplifier is benefit to boost power gain without increasing power dissipation. The CR-LNA is fabricated by a standard 0.18-mu m CMOS process with a chip size of 0.59 mm. The quiescent current of the circuit is merely 4.2 mA from a power supply of 1.3 V. Measured results demonstrate 20.4-dB gain, 3.7-dB noise figure, 11-dB input return loss, 18-dB output return loss, -32-dBm input Pid(B), and -18.3-dBm IIP3 at 10.7 GHz, respectively. (C) 2013 Wiley Periodicals, Inc.
引用
收藏
页码:2429 / 2431
页数:3
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