Regimes of leakage current in ALD-processed Al2O3 thin-film layers

被引：15

作者：

Spahr, Holger ^{[1
]}

Reinker, Johannes ^{[1
]}

Buelow, Tim ^{[1
]}

Nanova, Diana ^{[1
]}

Johannes, Hans-Hermann ^{[1
]}

Kowalsky, Wolfgang ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Hochfrequenztech, D-38106 Braunschweig, Germany

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 15期

关键词：

DIELECTRICS; INSULATORS;

D O I：

10.1088/0022-3727/46/15/155302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A recently known phenomenon of thin oxide layers with thicknesses below approximately 40 nm is the increase in their breakdown electric field, called disruptive strength, towards lower thicknesses. This offers the possibility of examining the current-electric field characteristics at higher electric field strengths without an early electric breakdown. In this paper, we report on the identification of a current regime of trap-free square law and the buildup of an S-shaped current-electric field characteristic curve. This observation for atomic layer deposition (ALD)-processed Al2O3 layers has not been mentioned in the literature so far. Additionally, a modern model of space charge limited current is used to fit the S-shaped characteristic and extract the associated parameters, such as mobility, density of states, and the energy band gap between the conduction band and the trap state. In this context, the Poole-Frenkel effect is neglected in the model to fit our measurements towards the current increase after the trap filled limit.

引用

页数：5

共 14 条

[1]

Banerjee P, 2009, NAT NANOTECHNOL, V4, P292, DOI [10.1038/nnano.2009.37, 10.1038/NNANO.2009.37]

[2] SPACE-CHARGE-LIMITED CURRENT ENHANCED BY FRENKEL EFFECT [J].

BARBE, DF .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (11) :1812-&

[3] Filamentary model of dielectric breakdown [J].

Blonkowski, S. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (08)

[4] Atomic-layer-deposited Al2O3-HfO2-Al2O3 dielectrics for metal-insulator-metal capacitor applications -: art. no. 053501 [J].

Ding, SJ ;

Zhu, CX ;

Li, MF ;

Zhang, DW .

APPLIED PHYSICS LETTERS, 2005, 87 (05)

[5] Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates [J].

Groner, MD ;

Elam, JW ;

Fabreguette, FH ;

George, SM .

THIN SOLID FILMS, 2002, 413 (1-2) :186-197

[6] VOLUME-CONTROLLED CURRENT INJECTION IN INSULATORS [J].

LAMPERT, MA .

REPORTS ON PROGRESS IN PHYSICS, 1964, 27 :329-367

[7] Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs -: art. no. 182904 [J].

Lin, HC ;

Ye, PD ;

Wilk, GD .

APPLIED PHYSICS LETTERS, 2005, 87 (18) :1-3

[8] CURRENT TRANSIENTS IN INSULATORS [J].

LINDMAYER, J .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :196-+

[9] Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation [J].

Liu, Z. H. ;

Ng, G. I. ;

Zhou, H. ;

Arulkumaran, S. ;

Maung, Y. K. T. .

APPLIED PHYSICS LETTERS, 2011, 98 (11)

[10] Dielectric breakdown mechanisms in gate oxides [J].

Lombardo, S ;

Stathis, JH ;

Linder, BP ;

Pey, KL ;

Palumbo, F ;

Tung, CH .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (12)

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