Quantum resistance metrology in graphene

被引:65
|
作者
Giesbers, A. J. M. [1 ]
Rietveld, G. [2 ]
Houtzager, E. [2 ]
Zeitler, U. [1 ]
Yang, R. [3 ]
Novoselov, K. S. [3 ]
Geim, A. K. [3 ]
Maan, J. C. [1 ]
机构
[1] Radboud Univ Nijmegen, Inst Mol & Mat, High Field Magnet Lab, NL-6525 ED Nijmegen, Netherlands
[2] NMi Van Swinden Lab BV, NL-2629 JA Delft, Netherlands
[3] Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England
关键词
carbon; contact resistance; nanostructured materials; quantum Hall effect;
D O I
10.1063/1.3043426
中图分类号
O59 [应用物理学];
学科分类号
摘要
We performed a metrological characterization of the quantum Hall resistance in a 1 mu m wide graphene Hall bar. The longitudinal resistivity in the center of the nu=+/- 2 quantum Hall plateaus vanishes within the measurement noise of 20 m Omega up to 2 mu A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5 mu A current) equal to that in conventional semiconductors. The principal limitation of the present experiments is the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.
引用
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页数:3
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