High Anti-Interference Ti3C2Tx MXene Field-Effect-Transistor-Based Alkali Indicator

被引：31

作者：

Liu, Chengbin ^{[1
,2
]}

Hao, Sibei ^{[1
,2
]}

Chen, Xiaoyan ^{[1
,2
]}

Zong, Boyang ^{[1
,2
]}

Mao, Shun ^{[1
,2
]}

机构：

[1] Tongji Univ, Shanghai East Hosp, Coll Environm Sci & Engn, Biomed Multidisciplinary Innovat Res Inst,State K, Shanghai 200092, Peoples R China

[2] Shanghai Inst Pollut Control & Ecol Secur, Shanghai 200092, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2020年 / 12卷 / 29期

关键词：

Ti3C2Tx MXene; field-effect transistor; alkali indicator; high anti-interference sensing; in situ morphological image evolution; REAL-TIME; GRAPHENE; SURFACE; PERFORMANCE; NANOSHEETS; BIOSENSOR; CARBON; NOISE;

D O I：

10.1021/acsami.0c09921

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

MXenes, a group of emerging two-dimensional (2D) transition metal carbides or nitrides, have attracted wide interest due to their unique structures and properties. Their stability and applicability in different media especially in an alkaline environment are directly associated with their potential applications and are not yet explored. Herein, a field-effect transistor (FET) is fabricated with single/double-layer Ti3C2Tx MXene. TheTi(3)C(2)T(x) FET indicator shows a fast (similar to 1 s), sensitive, and selective response to alkali. Moreover, the device can work even in a high-salinity (2 M NaCI) environment, suggesting its high anti-interference ability for alkali in a high-ionic-strength environment. Using an in situ morphological image evolution study, it is demonstrated that the response signal results from alkali-induced denaturation of Ti3C2Tx nanosheets. The Ti3C2Tx-based alkali FET indicator and systematic evaluation on alkali-induced structure evolution of Ti3C2Tx provide essential insights into MXene-based FETs and future applications of MXene in alkaline environments.

引用

页码：32970 / 32978

页数：9

共 60 条

[1] 2D metal carbides and nitrides (MXenes) for energy storage [J].