Conductance through zigzag quantum dots arrays

被引：1

作者：

Ueno, H ^{[1
]}

Moriyasu, K ^{[1
]}

Wada, Y ^{[1
]}

Osako, S ^{[1
]}

Kubo, H ^{[1
]}

Mori, N ^{[1
]}

Hamaguchi, C ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 47卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00168-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated quantum dots arrays on a GaAs/Al0.3Ga0.7As quantum well by using electron beam lithography and chemical wet etching, and studied their transport properties. We especially focused on geometrical dependence of conductance through quantum dots arrays. We measured I-V characteristics of samples with two different geometrical forms, which consisted of ten quantum dots in straight and zigzag forms. We also investigated a difference in transport properties between two types of samples, which are quantum dots arrays with and without Al-g ate on top of the samples.

引用

页码：127 / 129

页数：3

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