Structural characterization of Si1-xCx nanolayers synthesized by C Implantation into SiO2/Si

被引：2

作者：

dos Reis, R. M. S. ^{[1
]}

Maltez, R. L. ^{[1
]}

Boudinov, H. ^{[1
]}

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

来源：

MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011 | 2011年 / 39卷 / 01期

关键词：

CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; SIC BUFFER LAYER; SI(111) SUBSTRATE; LASER-DIODES; GROWTH; GAN; FABRICATION; SILICON; FILMS;

D O I：

10.1149/1.3615181

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report the conversion of Si layer in 40 nm SiC by 40 keV carbon (C) implantation into SiO2/Si structure. SiC layer is revealed to the sample surface after final SiO2 etching. Two distinct methods were carried out: a) by sequential C implantations followed by 1250 degrees C annealing after each implantation step (under a flux consisting of a mixture of 99% Ar with 1% O-2) and, b) by single-step implantation followed by the same annealing. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution after each sequential implantation step and annealing. Transmission electron microscopy (TEM) has shown that single-step implantation, up to the same minimum fluence, results in better structural quality and granular nature layer in the case of sequential synthesis

引用

页码：95 / 101

页数：7

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