Effects of HfOx treated indium tin oxide on organic emitting diodes

被引：0

作者：

Sohn, Sunyoung ^{[1
]}

Park, Keunhee ^{[1
]}

Jung, Donggeun ^{[1
]}

Kim, Hyoungsub

机构：

[1] Sungkyunkwan Univ, Inst Basic Sci, Dept Phys, Brain Korea Phys Res Div 21, Suwon, Kyungki Do, South Korea

来源：

IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface of ITO in OLEDs was treated with HfOx, deposition process using an atomic layer chemical vapor depositions system. The treatment at room temperature for 5 cycles exhibited significantly improved electroluminescent characteristics compared to the OLEDs wthout any treatment, which is believed to be caused by the increased holes injection efficiency.

引用

页码：970 / 972

页数：3

共 8 条

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