Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

被引：40
作者：
Aichinger, Thomas [1 ]
Lenahan, Patrick M. [1 ]
机构：
[1] Penn State Univ, University Pk, PA 16802 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 08期
关键词：
RESONANCE; ELECTRON;
D O I：
10.1063/1.4747495
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747495]
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