Modeling the Point-Spread Function in Helium-Ion Lithography

被引：19

作者：

Winston, Donald ^{[1
,2
]}

Ferrera, J. ^{[1
]}

Battistella, L. ^{[1
]}

Vladar, A. E. ^{[2
]}

Berggren, K. K. ^{[1
,3
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] NIST, Gaithersburg, MD 20899 USA

[3] Delft Univ Technol, Delft, Netherlands

来源：

SCANNING | 2012年 / 34卷 / 02期

关键词：

Monte Carlo modeling; focused ion beam; metrology; electron-beam lithography; SECONDARY-ELECTRON EMISSION; HYDROGEN SILSESQUIOXANE; BEAM LITHOGRAPHY; STOPPING POWER; ENERGY; SOLIDS;

D O I：

10.1002/sca.20290

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present here a hybrid approach to modeling helium-ion lithography that combines the power and ease-of-use of the Stopping and Range of Ions in Matter (SRIM) software with the results of recent work simulating secondary electron (SE) yield in helium-ion microscopy. This approach traces along SRIM-produced helium-ion trajectories, generating and simulating trajectories for SEs using a Monte Carlo method. We found, both through simulation and experiment, that the spatial distribution of energy deposition in a resist as a function of radial distance from beam incidence, i.e. the point spread function, is not simply a sum of Gauss functions. SCANNING 33: 121128, 2012. (c) 2011 Wiley Periodicals, Inc.

引用

页码：121 / 128

页数：8

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