Modeling the Point-Spread Function in Helium-Ion Lithography

被引：19

作者：

Winston, Donald ^{[1
,2
]}

Ferrera, J. ^{[1
]}

Battistella, L. ^{[1
]}

Vladar, A. E. ^{[2
]}

Berggren, K. K. ^{[1
,3
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] NIST, Gaithersburg, MD 20899 USA

[3] Delft Univ Technol, Delft, Netherlands

来源：

SCANNING | 2012年 / 34卷 / 02期

关键词：

Monte Carlo modeling; focused ion beam; metrology; electron-beam lithography; SECONDARY-ELECTRON EMISSION; HYDROGEN SILSESQUIOXANE; BEAM LITHOGRAPHY; STOPPING POWER; ENERGY; SOLIDS;

D O I：

10.1002/sca.20290

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present here a hybrid approach to modeling helium-ion lithography that combines the power and ease-of-use of the Stopping and Range of Ions in Matter (SRIM) software with the results of recent work simulating secondary electron (SE) yield in helium-ion microscopy. This approach traces along SRIM-produced helium-ion trajectories, generating and simulating trajectories for SEs using a Monte Carlo method. We found, both through simulation and experiment, that the spatial distribution of energy deposition in a resist as a function of radial distance from beam incidence, i.e. the point spread function, is not simply a sum of Gauss functions. SCANNING 33: 121128, 2012. (c) 2011 Wiley Periodicals, Inc.

引用

页码：121 / 128

页数：8

共 28 条

[1] Extraction of the point-spread function in electron-beam lithography using a cross geometry
Schefzyk, D.
Biesinger, D. E. F.
Wharam, D. A.
MICROELECTRONIC ENGINEERING, 2010, 87 (5-8) : 1091 - 1094
[2] Determining the Resolution Limits of Electron-Beam Lithography: Direct Measurement of the Point-Spread Function
Manfrinato, Vitor R.
Wen, Jianguo
Zhang, Lihua
Yang, Yujia
Hobbs, Richard G.
Baker, Bowen
Su, Dong
Zakharov, Dmitri
Zaluzec, Nestor J.
Miller, Dean J.
Stach, Eric A.
Berggren, Karl K.
NANO LETTERS, 2014, 14 (08) : 4406 - 4412
[3] Rutherford backscattering oscillation in scanning helium-ion microscopy
Kostinski, Sarah
Yao, Nan
JOURNAL OF APPLIED PHYSICS, 2011, 109 (06)
[4] Photometry, Centroid and Point-spread Function Measurements in the LSST Camera Focal Plane Using Artificial Stars
Esteves, Johnny H.
Utsumi, Yousuke
Snyder, Adam
Schutt, Theo
Broughton, Alex
Trbalic, Bahrudin
Mau, Sidney
Rasmussen, Andrew
Malagon, Andres A. Plazas
Bradshaw, Andrew
Marshall, Stuart
Digel, Seth
Chiang, James
Rykoff, Eli
Waters, Chris
Soares-Santos, Marcelle
Roodman, Aaron
PUBLICATIONS OF THE ASTRONOMICAL SOCIETY OF THE PACIFIC, 2023, 135 (1053)
[5] Point spread function for the calculation of acid distribution in chemically amplified resists for extreme ultraviolet lithography
Kozawa, Takahiro
Saeki, Akinori
Tagawa, Seiichi
APPLIED PHYSICS EXPRESS, 2008, 1 (02)
[6] Resists for Helium Ion Beam Lithography: Recent Advances
Kiran, Nagarjuna Ravi
Chauhan, Manvendra
Sharma, Satinder K.
Ghosh, Subrata
Gonsalves, Kenneth E.
ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (12) : 3805 - 3817
[7] Fabrication of carbon nanomembranes by helium ion beam lithography
Zhang, Xianghui
Vieker, Henning
Beyer, Andre
Goelzhaeuser, Armin
BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2014, 5 : 188 - 194
[8] Point spread function for the calculation of acid distribution in chemically amplified resists used for electron-beam lithography
Kozawa, Takahiro
Tagawa, Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (45-49): : L1200 - L1202
[9] Large-Scale Focused Helium Ion Beam Lithography
LeFebvre, Jay C.
Cybart, Shane A.
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2021, 31 (05)
[10] New parametric point spread function calibration methodology for improving the accuracy of patterning prediction in electron-beam lithography
Liu, Chun-Hung
Ng, Hoi-Tou
Tsai, Kuen-Yu
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2012, 11 (01):

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