Molecular dynamics simulations of ion-induced rearrangement of ultrathin oxide films on silicon

被引：3

作者：

Kubota, AA ^{[1
]}

Economou, DJ ^{[1
]}

机构：

[1] Univ Houston, Dept Chem Engn, Plasma Proc Lab, Houston, TX 77204 USA

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 1999年 / 27卷 / 01期

基金：

美国国家科学基金会;

关键词：

oxide islands; sputtering; surface cleaning;

D O I：

10.1109/27.763068

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

We present three-dimensional images of ion-irradiated ultrathin oxide films on silicon surfaces, generated from molecular dynamics simulations. The surface has the tendency to form oxide islands as the him is sputtered away by 100 eV Ar+ ions. We also show an image of a "peeling" oxide strand which forms occasionally as a result of ions impacting at an angle of 45 degrees from normal.

引用

页码：106 / 107

页数：2

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