Relativistic effects on the structural and transport properties of III-V compounds: A first-principles study

被引:54
作者
Briki, M. [2 ]
Abdelouhab, M. [2 ]
Zaoui, A. [1 ]
Ferhat, M. [2 ]
机构
[1] Univ Sci & Technol Lille, LML UMR Polytech Lille 8107, F-59655 Villeneuve Dascq, France
[2] Univ Sci & Technol Oran, Dept Phys, Oran, Algeria
关键词
III-V compounds; Transport properties; ab initio calculations; MOLECULAR-DYNAMICS SIMULATION; THERMODYNAMIC PROPERTIES; BAND-STRUCTURE; GALLIUM NITRIDE; SEMICONDUCTORS; GAN; SPECTROSCOPY; ENERGY; ALLOY; MODES;
D O I
10.1016/j.spmi.2008.12.022
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have performed ab initio self-consistent calculations based on the full potential linear augmented plane-wave method (FP-LAPW) with the local density approximation (LDA) and the Generalised Gradient Approximation (GGA) to investigate the relativistic effects, on the structural, and transport properties of Ill-V compounds. We found that the stabilisation (destabilisation) of s, p*(p, d) orbital energies (i) reduces the lattice parameters of III-V compounds, considerably reduces the band gaps of the III-V compounds, (ii) reduces the effective masse, and (iii) induces strong spin orbit splitting of heavier III-V compounds. Furthermore we circumvent the negative gap problem by combining non relativistic and Engel-Vosko approximations. These approaches open the gap of the most III-V compounds, and leads to a realistic band structure. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:80 / 90
页数:11
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