Cooled photodiodes based on a type-II single p-InAsSbP/n-InAs heterostructure

被引：4

作者：

Il'inskaya, N. D. ^{[1
]}

Karandashev, S. A.

Latnikova, N. M.

Lavrov, A. A.

Matveev, B. A.

Petrov, A. S.

Remennyi, M. A.

Sevost'yanov, E. N.

Stus', N. M.

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2013年 / 39卷 / 09期

关键词：

Technical Physic Letter; Ideality Factor; Current Voltage Characteristic; Wave Edge; Reverse Branch;

D O I：

10.1134/S1063785013090174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/n-InAs heterostructure formed on a heavily doped n (+)-InAs substrate (n (+) similar to 10(18) cm(-3)) is presented. It is shown that, at low temperatures (77 < T < 190 K), the generation-recombination current flow mechanism typical of p-i-n diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented.

引用

页码：818 / 821

页数：4

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