Electro-thermal high-level modeling of integrated circuits

被引:6
|
作者
Krencker, J. C. [1 ]
Kammerer, J. B. [1 ]
Herve, Y. [1 ]
Hebrard, L. [1 ]
机构
[1] InESS, F-67037 Strasbourg 2, France
关键词
Electro-thermal; High-level model; 3D IC; Verilog-A; VHDL-AMS; CAD;
D O I
10.1016/j.mejo.2014.02.001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Operating temperature and temperature gradients are of critical concern in the design of planar integrated circuits (ICs) and are bound to be exacerbated in the upcoming 3D technologies. However, a thermal aware design of ICs allows thermal issues to be kept to the minimum. Previously, a simulator integrated in the Cadence environment that allows electro-thermal simulations to be carried out at a transistor level has been presented. Since this simulator is based on the use of the Verilog - A (R) hardware description language, electrothermal simulation can be performed as long as high-level electro-thermal models are provided. In this paper, a methodology used to build such high-level electro-thermal models compliant with this simulator is detailed and simulation results at low and high level are compared. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:491 / 499
页数:9
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