Enhancement of optoelectronic parameters of Nd-doped ZnO nanowires for photodetector applications

被引：98

作者：

Raj, I. Loyola Poul ^{[1
]}

Valanarasu, S. ^{[2
]}

Hariprasad, K. ^{[3
]}

Ponraj, Joice Sophia ^{[4
,5
]}

Chidhambaram, N. ^{[6
]}

Ganesh, V. ^{[7
,8
]}

Ali, H. Elhosiny ^{[7
,8
,9
]}

Khairy, Yasmin ^{[9
]}

机构：

[1] Ananda Coll, Dept Phys, Devakottai 630303, India

[2] Arul Anandar Coll, PG & Res Dept Phys, Madurai 625514, Tamil Nadu, India

[3] Inst Aeronaut Engn, Dept Phys, Hyderabad 500043, India

[4] Aaivalayam Dynam Integrated Res Acad & Corp, Ctr Adv Mat, Coimbatore 641046, Tamil Nadu, India

[5] Int Iberian Nanotechnol Lab INL, Dept Micro & Nanofabricat, P-4715330 Braga, Portugal

[6] Rajah Serfoji Govt Coll Autonomous, Dept Phys, Thanjavur 613005, Tamil Nadu, India

[7] King Khalid Univ, Res Ctr Adv Mat Sci RCAMS, POB 9004, Abha 61413, Saudi Arabia

[8] King Khalid Univ, Dept Phys, Coll Sci, Adv Funct Mat & Optoelect Lab AFMOL, Abha 61413, Saudi Arabia

[9] Zagazig Univ, Fac Sci, Phys Dept, Zagazig 44519, Egypt

来源：

OPTICAL MATERIALS | 2020年 / 109卷

关键词：

ZnO; Nd doping; CBD method; Photoluminescence; Photodetector; HIGH-PERFORMANCE; THIN-FILMS; OPTICAL-PROPERTIES; BAND-GAP; GROWTH; TEMPERATURE; MORPHOLOGY; NANORODS; NANOPARTICLES; TRANSITION;

D O I：

10.1016/j.optmat.2020.110396

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pristine and neodymium-doped (3, 6, and 9 wt.%) ZnO nanostructured thin films were deposited on glass substrates using the chemical bath technique. The changes in structural, topographical, photoluminescence, and UV detection properties have been studied. XRD studies confirmed the ZnO phase with a hexagonal structure with a strong prevalence of (002) peak. Nd-doping reduces the bandgap value of the grown material from 3.33 to 3.18 eV. The photoluminescence studies of grown nanowires exhibited the presence of luminescence centers at 387, 412, 438, 452, 477, and 525 nm, respectively. The photocurrent value is increased from 5.37 x 10(-7) to 3.77 x 10(-6) A on increasing the Nd doping content from 0 to 6%. The Responsivity, External quantum efficiency, and Detectivity of pristine and doped samples were also studied. We found that the 6% Nd-doped sample shows improved values of optoelectronic parameters which indicate that it is a potential candidate for photodetector applications.

引用

页数：9

共 65 条

[1] High-performance multicolor metal-semiconductor-metal Si photodetector enhanced by nanostructured NiO thin film [J].