Determining the state of non-volatile memory cells with floating gate using scanning probe microscopy.

被引：1

作者：

Hanzii, D. ^{[1
]}

Kelm, E. ^{[2
]}

Luapunov, N. ^{[2
]}

Milovanov, R. ^{[2
]}

Molodcova, G. ^{[2
]}

Yanul, M. ^{[1
]}

Zubov, D. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Nanotechnol Microelect, Moscow 119991, Russia

[2] NT MDT, Moscow 124482, Russia

来源：

INTERNATIONAL CONFERENCE MICRO- AND NANO-ELECTRONICS 2012 | 2012年 / 8700卷

关键词：

failure analysis; non-volatile memory; floating gate; scanning probe microscopy;

D O I：

10.1117/12.2017156

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

During a failure analysis of integrated circuits, containing non-volatile memory, it is often necessary to determine its contents while Standard memory reading procedures are not applicable. This article considers how the state of NVM cells with floating gate can be determined using scanning probe microscopy. Samples preparation and measuring procedure are described with the example of Microchip microcontrollers with the EPROM memory (PIC12C508) and flash-EEPROM memory (PIC16F876A).

引用

页数：11