Absorptive CdTe films optical parameters and film thickness determination by the ellipsometric method

被引:0
作者
Evmenova, Anna Z. [1 ]
Odarych, Volodymyr A. [2 ]
Sizov, Fedir F. [1 ]
Vuichyk, Mykola V. [1 ]
机构
[1] NAS Ukraine, VE Lashkariov Inst Semicond Phys, UA-03028 Kiev, Ukraine
[2] Taras Shevchenko Kyiv Natl Univ, Dept Phys, UA-03022 Kiev, Ukraine
关键词
ellipsometry; passivation CdTe films; methods of calculating film parameters;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Ellipsometric detective method of refractive index, absorptive index and thickness of the film deposited on the substrate with some optical parameters has been developed, This method is applied for optical parameters and film thickness detecting in visible and near IR spectrum. Refraction index and film thickness dispersion has been studied. It has been determined that film refractive index (2.6 on average) is by 7% less than that of monocrystalline CdTe.
引用
收藏
页码:585 / 600
页数:16
相关论文
共 21 条
[1]   OPTICAL-PROPERTIES OF CDTE - EXPERIMENTAL AND MODELING [J].
ADACHI, S ;
KIMURA, T ;
SUZUKI, N .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) :3435-3441
[2]  
AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, P583
[3]   DETERMINATION OF OPTICAL-CONSTANTS AND BAND-GAPS OF BILAYERED SEMICONDUCTOR-FILMS [J].
BHATTACHARYYA, D ;
CHAUDHURI, S ;
PAL, AK .
VACUUM, 1995, 46 (03) :309-313
[4]   Influence of substrate materials on the properties of CdTe thin films grown by hot-wall epitaxy [J].
Bilevych, Ye. ;
Soshnikov, A. ;
Darchuk, L. ;
Apatskaya, M. ;
Tsybrii, Z. ;
Vuychik, M. ;
Boka, A. ;
Sizov, F. ;
Boelling, O. ;
Sulkio-Cleff, B. .
JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) :E1177-E1181
[5]  
BILEVYCH YO, 2004, SEMICONDUCTOR PHYS Q, V7, P129
[6]   REFLECTIVITIES AND ELECTRONIC BAND STRUCTURES OF CDTE AND HGTE [J].
CHADI, DJ ;
BALKANSK.M ;
WALTER, JP ;
PETROFF, Y ;
COHEN, ML .
PHYSICAL REVIEW B, 1972, 5 (08) :3058-&
[7]  
Dagman E. E., 1989, Optics and Spectroscopy, V66, P101
[8]  
GORSHKOV MM, 1974, ELLIPSOMETRIYA, P200
[9]   Development of a parametric optical constant model for Hg1-xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth [J].
Johs, B ;
Herzinger, CM ;
Dinan, JH ;
Cornfeld, A ;
Benson, JD .
THIN SOLID FILMS, 1998, 313 :137-142
[10]  
Kornienko KN, 2006, FUNCT MATER, V13, P179