Optical and electrical properties of Mg-doped zinc tin oxide films prepared by radio frequency magnetron sputtering

被引：13

作者：

Ma, Tae Young ^{[1
]}

Choi, Mu Hee

机构：

[1] Gyeongsang Natl Univ, Dept Elect Engn, Jinju 660701, Gyeongnam, South Korea

来源：

APPLIED SURFACE SCIENCE | 2013年 / 286卷

基金：

新加坡国家研究基金会;

关键词：

Zinc tin oxide; Electron suppressor; RF magnetron sputtering; Transparent thin-film transistors; XPS; SNO2; THIN-FILMS; INDIUM-OXIDE; URBACH TAIL; TEMPERATURE; TRANSISTORS; XPS; STABILITY; THICKNESS; LAYER;

D O I：

10.1016/j.apsusc.2013.09.035

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, magnesium (Mg)-doped zinc tin oxide (ZTO) films were deposited by radio frequency (RF) magnetron sputtering. The Mg was selected as an electron suppressor for the ZTO films. X-ray diffraction (XRD) was carried out to observe the crystallinity of the films. The Mg-doping effects on the elemental properties of the films were investigated by X-ray photoelectron spectroscopy (XPS). The optical properties, such as transmittance, optical band gap, Urbach energy, and refractive index, were compared as a function of Mg content. Bottom-gate transparent thin-film transistors (TTFTs) were fabricated on l\P Si wafers. The turn-off voltage, threshold voltage, and mobility variation as a function of Mg content were studied. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：131 / 136

页数：6

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